TagoreTech Appoints Paul Hart as Chief Executive Officer
Chicago, IL (September 3, 2024) – TagoreTech Inc., a pioneer of high-power GaN-based RF switches and Frontend solutions, today announced the appointment of Paul Hart as Chief Executive Officer. Paul Hart will be succeeding Chae Lee who will be leaving the company after the successful sale of its Power GaN-on-Si business to Global Foundries.
Paul Hart brings more than 25 years of experience to TagoreTech. Before joining TagoreTech, Mr. Hart was Executive Vice President and General Manager of the Radio Power Business at NXP Semiconductor. In this role, Paul was responsible for establishing NXP’s leadership position in 5G and identifying new market opportunities to drive growth with best-in-class technologies, product offerings and system solutions spanning the entire range of 5G frequencies. Previous to NXP, Mr. Hart held the role of Senior Vice President and General Manager of RF Power at Freescale Semiconductor. Mr. Hart earned a Bachelor of Science degree in electrical engineering from the University of Arizona and a master’s degree in microwaves and optoelectronics from University College London.
“I am excited to have Paul join TagoreTech as its CEO. With his extensive domain expertise in the RF semiconductor space and proven track record of success, Paul is uniquely qualified to lead TagoreTech into the future. His passion for innovation, coupled with strong leadership skills, will be invaluable to TagoreTech’s next phase of growth.” said Chairman of the Board, Oleg Khaykin. “I also would like to thank Chae Lee on behalf of the Board and the Company for his contribution to TagoreTech. Under his leadership, the company has achieved significant milestones, including a successful sale of the Power GaN Business to Global Foundries. We wish him success in his future endeavors.”
“Paul is an accomplished technology leader with an impressive track record. I am looking forward to working with Paul to realize company’s mission of “Disrupting SWaP” (Size, Weight and Power) in all our product offering” said Manish Shah, Co-founder and Chief Technology Officer of TagoreTech.
About TAGORE TECHNOLOGY INC.
TagoreTech was founded in January 2011 to pioneer Gallium Nitride-on-Silicon (GaN-on-Si) semiconductor technology for High Power Radio Frequency (RF) applications. TagoreTech is a fabless semiconductor company with design centers in Arlington Heights, Illinois, USA, and Kolkata, India. Our R&D team is dedicated to developing disruptive solutions leveraging wide bandgap technologies that bring significant Size, Weight, and Power, SWaP, advantage to our customers. For more information visit www.tagoretech.com
For further information please contact:
Name: Anindita Ray
Email: ray0521@tagoretech.com
TagoreTech Announces Spin-Out and Continued Innovation in RF Products
Chicago, Illinois (July 1, 2024) – TagoreTech is pleased to announce its spin-out from Tagore Technology, following the acquisition of Tagore Technology’s power Gallium Nitride (GaN) IP portfolio by Global Foundries (GF). As an independent entity, TagoreTech will continue to focus on innovation and leadership in RF products.
Key Highlights
- Independent Operation: TagoreTech will continue to innovate and lead in the RF products space as an independent company.
- Experienced Team: Our dedicated team of engineers will continue to drive advancements in GaN technology for RF applications.
- Business Continuity: There will be no major changes to the Tagore RF business, ensuring it remains “business as usual” for our valued customers and partners.
This spin-out marks a significant milestone for TagoreTech, highlighting our achievements and setting the stage for continued growth and innovation.
For further information, please email your queries to Anindita Ray. Email id : ray0521@tagoretech.com
Tagore Introduces New High Power GaN SPDT Switches with up to 550W Peak Power Handling for Radar & Cellular Infrastructure
Chicago, IL (June 17, 2024) – Tagore Technology Inc., a pioneer of high-power GaN-based RF switches, today announced the introduction of the TS8728N and TS8729N asymmetrical reflective single-pole two throw (SPDT) switches designed for broadband, high-power switching applications. The new feature-rich switches offer best-in-class insertion loss, power handling, high linearity, and high isolation performance and are well-suited for L & S-Band Radar & Cellular infrastructure applications.
The TS8728N is designed to operate at 400W of pulse power with 2ms pulse width and 20% duty cycle in S band whereas TS8729N is designed to operate at 550W of pulse power with 2ms pulse width and 20% duty cycle. Th devices operate with a single +5 V supply and switch with a single control voltage (0 to 3 V). They can be tuned to specific RF bands within the range of 0.3 to 5.0 GHz by modifying select external SMT components.
These new devices are compact, integrated high-power single-pole, double-throw (SPDT) with on board driver circuits. TS8729N can cover 500MHz to 2.0GHz and provide very high RF power handling & high linearity within a small package size. The TS8728N covers 0.5 to 5.0GHz & has been optimized for switching speed.
“The TS8728N and TS8729N feature low TX and RX insertion loss, high isolation with very low DC power consumption and require minimal external components, enabling a smaller PCB footprint” said Klaus Buehring, Tagore Technology’s Chief Sales and Marketing officer.The TS8728N and TS8729N are packaged in a compact Quad Flat (QFN) 5x5mm 32 lead plastic package.”
For full datasheets and samples contact Tagore Technology’s Sales representative at rfgan@tagoretech.com
About TAGORE TECHNOLOGY INC.
Tagore Technology was founded in January 2011 to pioneer Gallium Nitride-on- Silicon (GaN-on-Si) and GaN-SiC semiconductor technology for Radio Frequency (RF) and power management applications. We are a fabless semiconductor Technology company with design centres in Arlington Heights, Illinois, USA and Kolkata, India. Our R&D team is dedicated to developing disruptive solutions leveraging wide bandgap semiconductor technologies that help address RF and power design challenges for our customers and accelerate time-to-market for a wide range of applications. For more information visit www.tagoretech.com
For EVBs and additional application information please contact:
Name: Anindita Ray
Email: ray0521@tagoretech.com
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Announcing the Release of New Modelithics® Non-linear Model for Tagore Technology GaN HEMT Transistor
Tampa, Florida (December 12, 2023) – Modelithics and Tagore Technology are pleased to announce the release of a new Modelithics non-linear model for Tagore Technology TA9210D RF GaN transistor. Modelithics is the leading independent provider of linear and non-linear RF/microwave models and Tagore Technology is a fabless semiconductor company providing gallium-nitride-on-silicon carbide (GaN-on-SiC) and gallium-nitride-on-silicon (GaN-on-Si) solutions for RF and power-management applications.
This large signal model for the Tagore Technology TA9210D 12.5W RF GaN transistor in a 32- pin QFN package is validated from DC to 8 GHz.
It is based on the extraction of a Modelithics- Enhanced Angelov non-linear model that is valid for Class AB and Class C Operation (Doherty design) and validated against the following Modelithics measurement data: Pulsed I-V, S- parameters (0.2 to 8 GHz), and large signal load pull in the 0.8 to 4 GHz band as well in Tagore’s evaluation board measurements. In addition, the model is temperature-dependent and includes electrical thermal capability.
The Modelithics non-linear model is available within the Modelithics COMPLETE Library, which is an indispensable collection of simulation models for all types of passive and active RF and microwave devices engineered to enable designers to go from concept to product faster and easier. The Modelithics COMPLETE Library is available for Keysight Technologies’ PathWave Advanced Design System (ADS), Keysight Technologies’ PathWave RF Synthesis (Genesys), Cadence® AWR Design Environment®, and other simulators. For a free trial, please visit www.modelithics.com.
Through the Modelithics Vendor Partner (MVP) program, FREE 90-day use of the Modelithics model for Tagore Technology GaN transistor is available. For more information or to request free use of the new models for the Tagore Technology, please visit www.modelithics.com/mvp/tagore.
About Modelithics, Inc.
Modelithics, Inc. (www.Modelithics.com) was formed in 2001 to address the industry-wide need for high- accuracy RF and microwave active and passive simulation models for use in Electronic Design Automation (EDA). Modelithics’ premium product is the Modelithics® COMPLETE Library, which includes the CLR Library™, containing measurement-based Microwave Global Models™ for a multitude of commercially-available passive component families, as well non-linear diode models, non-linear transistor models, and system level component models. Modelithics’ services also address a wide range of custom RF and microwave measurement and modeling needs. Modelithics product offerings also include the Modelithics mmWave & 5G Library, Modelithics System Components Library™ the Modelithics COMPLETE+3D Library. Modelithics® is a registered trademark of Modelithics, Inc. Microwave Global Models™, System Components Library™ and CLR Library™ are also trademarks of Modelithics, Inc. The Modelithics Vendor Partner (MVP) Program allows for collaboration and open communication during the development of advanced data sets and models for commercially available microwave components and devices, with flexible sponsorship and distribution arrangements for the resulting data and models. Modelithics also offers a Standard & Custom Test Fixture and Accessory Product Line, including legacy parts from J Micro Technology for a family of thin film Alumina substrate components.
About Tagore Technology Inc.
Tagore Technology was founded in January 2011 to pioneer Gallium Nitride-on-Silicon (GaN-on-Si) semiconductor technology for Radio Frequency (RF) and power management applications. We are a fabless semiconductor company with design centers in Arlington Heights, Illinois, USA and Kolkata, India. Our R&D team is dedicated to developing disruptive solutions leveraging wide bandgap technologies that help address RF and power design challenges for our customers and accelerate time-to-market for a wide range of applications. For more information visit www.tagoretech.com
Contacts
Modelithics® Welcomes Tagore Technology as Sponsoring MVP
Tampa, Florida (August 21, 2023) – Modelithics, the leading provider of RF/microwave simulation models, is pleased to welcome Tagore Technology, Inc. into the Modelithics Vendor Partner (MVP) program at the Sponsoring level. Tagore Technology is a fabless semiconductor company providing gallium-nitride-on-silicon (GaN-on-Si) and gallium-nitride-on-silicon carbide (GaN-on-SiC) solutions for RF and power-management applications.
Modelithics and Tagore Technology are in collaboration to develop a new model for the TA9210D GaN power transistor.
The TA9210D is a 15-W power transistor with an operating frequency range of 30 MHz to 4+ GHz. Typical performance in a 30MHz to -1GHz broadband application, the TA9210D achieves 18 dB of small-signal gain at the same frequency, the device delivers +41.5 dBm of saturated output power and achieves greater than 70% power-added efficiency (PAE). The TA9210D comes in a 32-lead, 3- × 6-mm quad-flat no-leads (QFN) package. Applications for the TA9210D power transistor include private mobile radio handsets, public safety radios, cellular infrastructure, and radios for defense.
The Modelithics model for the TA9210 device will be validated through measurements that include DC IV, S-parameters, and load pull. The model will be optimized for use under Class AB and Class C bias conditions. Once complete the model will be available and supported for all existing and new customers of the Modelithics COMPLETE LibraryTM and available for a free 90-day trials for all interested designers.
For more information, please visit www.Modelithics.com/MVP/Tagore. For those interested in long-term use, the new model will be available in the Modelithics COMPLETE Library for both Keysight Technologies’ PathWave Advanced Design System (ADS) and Cadence® AWR Design Environment®. The Modelithics COMPLETE Library represents more than 26,000 components from over 70 vendors. For more information, please visit: www.modelithics.com/model or contact sales@modelithics.com.
About Modelithics, Inc.
Modelithics, Inc. (www.Modelithics.com) was formed in 2001 to address the industry-wide need for high- accuracy RF and microwave active and passive simulation models for use in Electronic Design Automation (EDA). Modelithics’ premium product is the Modelithics® COMPLETE Library, which includes the CLR LibraryTM, containing measurement-based Microwave Global ModelsTM for a multitude of commercially available passive component families, as well non-linear diode models, non-linear transistor models, and system level component models. Modelithics’ services also address a wide range of custom RF and microwave measurement and modeling needs. Modelithics product offerings also include the Modelithics mmWave & 5G Library, Modelithics System Components LibraryTM the Modelithics COMPLETE+3D Library. Modelithics® is a registered trademark of Modelithics, Inc. Microwave Global ModelsTM, System Components LibraryTM and CLR LibraryTM are also trademarks of Modelithics, Inc. The Modelithics Vendor Partner (MVP) Program allows for collaboration and open communication during the development of advanced data sets and models for commercially available microwave components and devices, with flexible sponsorship and distribution arrangements for the resulting data and models. An example of such an arrangement is the Modelithics Qorvo GaN Library, a fully sponsored library distributed for free by Modelithics under sponsorship of Qorvo®. Modelithics also offers a Standard & Custom Test Fixture and Accessory Product Line, including legacy parts from J Micro Technology for a family of thin film Alumina substrate components.
About Tagore Technology Inc.
Tagore Technology was founded in January 2011 to pioneer Gallium Nitride-on-Silicon (GaN-on-Si) semiconductor technology for Radio Frequency (RF) and power management applications. We are a fabless semiconductor company with design centers in Arlington Heights, Illinois, USA and Kolkata, India. Our R&D team is dedicated to developing disruptive solutions leveraging wide bandgap technologies that help address RF and power design challenges for our customers and accelerate time-to-market for a wide range of applications. For more information visit www.tagoretech.com
Contacts
Tagore Technology Appoints Chae Lee as Chief Executive Officer
CHICAGO, IL. –January 10, 2023: Tagore Technology Inc., a pioneer of high-power GaN- based RF switches and power management applications, today announced the appointment of Chae Lee as Chief Executive Officer.
Chae Lee brings more than 35 years of experience to Tagore Technology. Prior to joining Tagore, Mr. Lee was President and CEO of Insyte Systems. Before that, Mr. Lee was Senior Vice President and General Manager of NXP’s Secure Interface and Power Solutions Business Unit where he grew the business unit’s revenue to $1B. Prior to NXP, Mr. Lee spent 16 years at Maxim Integrated Products where he developed multiple new product lines at Maxim and as Senior Vice President and General Manager of the Mobility Group, grew its revenue from $350M to $1B.
Mr. Lee graduated from the University of Missouri-Rolla with a Bachelor of Science degree in Electrical Engineering.
“I am pleased to welcome Chae to Tagore,” said Oleg Khaykin, Tagore Technology’s Chairman.
“Chae is an accomplished technology leader with an impressive track record.” Mr. Khaykin added, “The Board feels Chae is an excellent choice to leverage our recent progress and lead the company to achieve our aggressive growth strategy and expanded profitability.” CEO and co-founder of Tagore Technology, Amitava Das added: “As co-founders of Tagore, Manish Shah and I are delighted to welcome Chae to the Tagore family as we take the company to the next level in its growth trajectory.”
“I am impressed by Tagore’s disruptive technology that is revolutionizing RF switch design by cutting development time and reducing power and space requirements. It’s just a matter of time before Tagore emerges as the market leader,” said Chae Lee. “With that in mind, I’m looking forward to exciting challenges and opportunities to create even more value for our customers, shareholders and employees as we execute our growth strategy.”
Mr. Das will continue with Tagore Technology as a Board member and Chief Operating Officer.
About Tagore Technology
Tagore Technology was founded in January 2011 to pioneer Gallium Nitride-on-Silicon (GaN- on-Si) semiconductor technology for Radio Frequency (RF) and power management applications. We are a fabless semiconductor company with design centers in Arlington Heights, Illinois, USA and Kolkata, India. Our R&D team is dedicated to developing disruptive solutions leveraging wide bandgap technologies that help address RF and power design challenges for our customers and accelerate time-to-market for a wide range of applications. For more information visit www.tagoretech.com
For further information please contact:
Name: Anindita Ray
Email: ray0521@tagoretech.com
Tagore Technology Introduces New Antenna Tuning RF Switch Delivering Industry-leading RF Performance with 100V Peak RF Voltage and 1 ohm Ron
CHICAGO, IL. – September 09, 2022, Tagore Technology Inc., a pioneer of high-power GaN-based RF switches, today announced the introduction of the TS63421K antenna-tuning switch that delivers industry-leading performance with high peak voltage and low Ron. The new feature-rich switch offers best-in-class insertion loss, power handling, and harmonic performance and is well suited for filter and antenna tuning, dynamic matching in private radio access points, and public safety equipment.
The new reflective open Single Pole Four Throw (SP4T) switch is designed with Tagore's 2nd generation Gallium Nitride - Silicon (GaN-Si) process. The TS63421K is ideal for antenna or filter tuning applications where high RF peak voltage handling is desired. The device offers the industry’s lowest on-resistance (Ron) of 1 ohm and off capacitance of 0.2pf and can handle peak RF voltage of 100V. This RF switch device is configured as a four-throw output that can be independently controlled and, therefore, can have 16 different states or tuning values.
Klaus Buehring, Tagore Technology’s Chief Sales and Marketing officer said: “This GaN-Si SP4T device is great for antenna tuning applications with antenna optimization to improve efficiency, resulting in higher overall performance compared to our first generation product. This improved efficiency results in higher data throughput, increased battery life, and a longer range for fewer dropped calls”.
TS63421K is available in a 3X3 QFN plastic package and requires no external components making it well-suited for Low-SWaP applications. This new antenna tuning RF switch is compatible with existing products, allowing customers to enhance radio performance by switching to the latest version of the second-generation of product.
For full datasheets and samples contact Tagore Technology’s Sales representative at rfgan@tagoretech.com
About Tagore Technology
Tagore Technology was founded in January 2011 to pioneer Gallium Nitride-on-Silicon (GaN-on-Si) and GaN-SiC semiconductor technology for Radio Frequency (RF) and power management applications. We are a fabless semiconductor company with design centres in Arlington Heights, Illinois, USA and Kolkata, India. Our R&D team is dedicated to developing disruptive solutions leveraging wide bandgap semiconductor technologies that help address RF and power design challenges for our customers and accelerate time-to-market for a wide range of applications. For more information visit www.tagoretech.com
For EVBs and additional application information please contact:
Name: Anindita Ray
Email: ray0521@tagoretech.com
Tagore Introduces Advanced Dual-Channel Ultra-Low Noise Amplifier with Integrated Fail-Safe RF Switch for 5G Infrastructure and TDD mMIMO Application
CHICAGO, IL. – August 23, 2022: Tagore Technology Inc., a pioneer of high-power, low-current GaN-based RF switches, today announced the introduction of the TSL8329M, a dual-channel Low Noise Amplifier (LNA) with an integrated RF switch, multichip module. Designed for demanding applications, the module operates from 3.3 GHz to 4.2GHz. This dual channel module is architected with cascading, two-stage LNA and a high-power GaN-based fail-safe RF switch. The TSL8329M is well-suited for 5G infrastructure and TDD massive MIMO systems.
“With integrated dual-channel RF front end, the high performance TSL8329M is well suited for the most demanding 5G infrastructure radios, small cells, and massive MIMO systems. The footprint and pinouts allow easy adaption in complex MIMO configurations, said Klaus Buehring, Tagore Technology’s Chief Marketing Officer.
The TSL8329M has NF of 1 dB with 32 dB of gain at 3.6 GHz with an output third-order intercept point (OIP3) of 35 dBm. In bypass mode, the LNA provides 13 dB of gain. In power-down mode, the LNAs are turned off and the device draws 5 mA. In transmit operation, when RF inputs are connected to a termination pin (TERM-CHA or TERM-CHB), the switch provides a low insertion loss of 0.45 dB at 3.6GHz and handles long-term evolution (LTE) average power (9 dB peak to average ratio (PAR)) of 43 dBm for full lifetime operation. The device comes in a RoHS compliant, compact, 6 mm × 6 mm, 40-lead LFCSP.
The TSL8329M-EVB-A tuned evaluation board is also available.
Specifications
|
Part number/ Reference Design |
Freq Range(GHz) |
Test Condition |
Gain(dB)/IL(dB) |
NF(dB) |
Max input power (dBm) /OP1 (dBm) |
OIP3(dBm) |
Vdd Range(V) |
Package |
Datasheet / Samples |
|
3.3-4.0 |
TX:5V, 400uA@3.6GHz |
IL: 0.45 |
|
Max input power:43 |
|
2.7-5 |
|
|
|
|
RX-HG: 5V,90mA@3.6GHz |
Gain: 32 |
1 |
OP1:20 |
35 |
|
|
|||
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RX-LG:5V, 45mA@3.6GHz |
Gain: 13 |
0.9 |
OP1:10.5 |
23.5 |
|
|
|||
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RX-PD: 5V, 5mA@3.6GHz |
|
|
|
|
|
|
For full datasheets and samples contact Tagore Technology’s Sales representative at rfgan@tagoretech.com
About Tagore Technology
Tagore Technology was founded in January 2011 to pioneer Gallium Nitride-on-Silicon (GaN-on-Si) semiconductor technology for Radio Frequency (RF) and power management applications. We are a fabless semiconductor company with design centers in Arlington Heights, Illinois, USA and Kolkata, India. Our R&D team is dedicated to developing disruptive solutions leveraging wide bandgap technologies that help address RF and power design challenges for our customers and accelerate time-to-market for a wide range of applications. For more information visit www.tagoretech.com
For further information please contact:
Name: Anindita Ray
Email: ray0521@tagoretech.com
Tagore Technology Introduces Family of Ultra-Low Noise Amplifiers and Linear PA Driver for 5G Infrastructure and High-Performance Receivers
About Tagore Technology
Tagore Technology was founded in January 2011 to pioneer Gallium Nitride-on-Silicon (GaN- on-Si) semiconductor technology for Radio Frequency (RF) and power management applications. We are a fabless semiconductor company with design centers in Arlington Heights, Illinois, USA and Kolkata, India. Our R&D team is dedicated to developing disruptive solutions leveraging wide bandgap technologies that help address RF and power design challenges for our customers and accelerate time-to-market for a wide range of applications. For more information visit www.tagoretech.com
For further information please contact:
Name: Anindita Ray
Email: ray0521@tagoretech.com
Second Generation RF Switches SPOTLIGHT/NEWS
Tagore Technology’s TS8x Second Generation RF Switches Deliver Industry-leading RF Performance
CHICAGO, IL. – September 14, 2021, Tagore Technology Inc., a pioneer of high-power GaN-based RF switches, today announced the introduction of a family of second-generation RF switches featuring 10W to 100W of average power. The new switches offer best-in-class insertion loss, power handling and harmonic performance. The TS8x family of products is best suited for post Power Amplifier (PA) harmonics filter switching for tactical and military communications (Mil Comm), land mobile radios (LMR) and private mobile radios (PMR). Lower insertion loss performance significantly reduces power consumption and enhances the battery life of handheld communication devices. Lower power dissipation also helps ease thermal management requirements to reduce the size, weight, and power (SWaP) of the overall system.
Klaus Buehring, Tagore Technology’s Chief Sales and Marketing officer, said: “Tagore’s TS8x family of switches enables customers to replace all traditional PIN diode-based switches that require many passive components and high-voltage bias supply to save significant board space and overall cost, and simplify RF front end design.”
The new family of products is pin and footprint compatible to existing products, allowing existing customers to enhance radio performance by switching to the latest generation of products.
Specifications
|
Specifications |
TS8423K |
TS8242FK |
TS8441L |
TS8021N |
|
SPnT |
SP2T |
SP4T |
SP4T |
SP2T |
|
P0.1dB_CW |
45dBm |
45dBm |
47dBm |
50dBm |
|
P0.1dB_Peak |
48dBm |
48dBm |
48dBm |
52dBm |
|
IL(1GHz) |
0.15dB |
0.25dB |
0.25dB |
0.20db |
|
IL(3GHz) |
0.30dB |
0.35dB |
0.5dB |
0.40dB |
|
Package |
3mm x 3mm |
3mm x 3mm |
4mm x 4mm |
5mm x 5mm |
For full datasheets and samples contact Tagore Technology’s Sales representative at rfgan@tagoretech.com
Tagore Technology was founded in January 2011 to pioneer Gallium Nitride-on-Silicon (GaN-on-Si) semiconductor technology for Radio Frequency (RF) and power management applications. We are a fabless semiconductor company with design centers in Arlington Heights, Illinois, USA and Kolkata, India. Our R&D team is dedicated to developing disruptive solutions leveraging wide bandgap technologies that help address RF and power design challenges for our customers and accelerate time-to-market for a wide range of applications. For more information visit www.tagoretech.com
For further information please contact:
Name: Anindita Ray
Email: ray0521@tagoretech.com
RF SPOTLIGHT/NEWS
Tagore introduces RF Power Handling SP4T GaN IC switch and on-board driver IC
Chicago, IL - Delivering disruptive semiconductor solutions for over 10 years, Tagore Technology Inc. introduces the Radio Frequency (RF) power handling SP4T Gallium Nitride (GaN) IC switch and on-board driver IC.The 30W CW TS7441L in a 4x4mm QFN is a symmetrical SP4T switch designed for 1MHz to 2.7GHz. The switch has a built-in controller IC. This GaN switch can be 10x smaller and 50x lower current drain compared to a PIN diode discrete switch.
The perfect solution for battery operated application. Microamps current drain, compared to 10’s of Milliamps with PIN Diodes.
Specifications
|
Part Number |
SPnT |
Frequency |
P0.1dB (CW) |
Isolation1/max GHz |
IL 1/max GHz |
H2/3(35 dBm) |
Switching Time |
Package |
VDD Supply |
Logic |
|
TS7441L |
4T |
1 MHz - 2.7 GHz |
30W |
32 / 23 dB |
0.45 / 0.9 dB |
80 dBc |
2.0 us |
4x4 |
2.6 - 5.5 V |
1.1 – VDD |
Tagore launches TA9210D GaN power transistor for radio applications and cellular infrastructure
CHICAGO, ILL. – Tagore Technology Inc. announces the introduction of the TA9210D 12.5W broadband capable GaN power transistor covering 30MHz to 2.7GHz frequency band with a single match. The TA9210D, based on GaN DHEMT technology is usable up to 4GHz. The new devices are suited for a range of applications including private mobile radio handsets, public safety and military radios and cellular infrastructure.The TA9210D’s input and output can be matched for best power and efficiency for the desired band. The device is packaged in a compact, low-cost Quad Flat No lead (QFN) 3x6x0.8mm, 32 leads plastic package.
The TA9210D is RoHS/REACH/Halogen Free Compliant.
Specifications
|
Part Number |
Frequency |
Linear Gain at 0.9 GHz |
Saturated Output Power at 0.9GHz |
PAE at 0.9 GHz |
Voltage |
Package |
|
TA9210D |
0.03 – 4.0 GHz |
18 dB |
12.5 W |
55% |
28/32V |
6 x 3 DFN |
For full datasheets and samples contact rfgan@tagoretech.com